The UK government is investing £7 million in AI-powered semiconductor research, aiming to accelerate the development of advanced materials through new infrastructure at the National Epitaxy Facility based at the University of Sheffield.
Backed by the Engineering and Physical Sciences Research Council (EPSRC), the funding will support the deployment of a Molecular Beam Epitaxy (MBE) system equipped with artificial intelligence to streamline and optimise the discovery of next-generation semiconductors. The new system is designed to explore novel material combinations, including the integration of semiconductors with superconductors, which could potentially enable entirely new categories of electronic devices.
The National Epitaxy Facility, operated in collaboration with the universities of Cambridge and UCL, plays a key role in UK semiconductor research and development. The upgraded MBE infrastructure will focus on sustainable materials using earth-abundant elements such as aluminum, nitrogen, and zinc, with an eye on environmental impact and global competitiveness.
Semiconductors underpin critical digital technologies, and breakthroughs in materials, like the development of Gallium Nitride, have historically led to new industries, including the global LED lighting market, now valued at £100 billion. The broader semiconductor industry is worth around £900 billion globally.
